j.eis.zu , lfna. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 buzjto sipmos ? power transistor n channel enhancement mode avalanche-rated pin1 pin 2 d pin 3 type buz 10 vds 50v id 23 a ^ds(on) 0.07 q package to-220 ab maximum ratings parameter continuous drain current tc = 26 c pulsed drain current tc = 25 c avalanche currentjimited by tjmax avalanche energy.periodic limited by 7jmax avalanche energy, single pulse /d = 23 a, vdd = 25 v, rgs = 25 q l = 15.1 uh, 7] = 25c gate source voltage power dissipation tc = 25 c operating temperature storage temperature thermal resistance, chip case thermal resistance, chip to ambient din humidity category, din 40 040 iec climatic category, din iec 68-1 symbol /d /dpuls /ar ar as vgs ^tot t\g rthjc ^?thja values 23 92 23 1.3 8 20 75 -55 ... + 150 -55... + 150 1.67 <75 e 55/150/56 unit a mj v w c k/w quality semi-conductors
electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit static characteristics drain- source breakdown voltage vgs = 0 v, /d = 0.25 ma, 7] = 25 c gate threshold voltage \/gs=vbs, b = 1 ma zero gate voltage drain current vbs = 50 v, i/gs = 0 v, 7j = 25 c \7ds = 50v, vgs = ov, 7] = 125c gate-source leakage current vqs = 20 v, v/ds = 0 v drain-source on-resistance vgs = 10v, /d = 14a ^(br)dss ^gs(th) idss /gss ^ds(on) 50 2.1 - - - - - 3 0.1 10 10 0.05 - 4 1 100 100 0.07 v ua na q
electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit dynamic characteristics transconductance vds> 2 * /d * f?ds(on)max, /d = 14 a input capacitance vqs = 0 v, vds = 25 v, f= 1 mhz output capacitance vgs = 0 v, vds = 25 v, f= 1 mhz reverse transfer capacitance vgs = 0 v, vds = 25 v. f = 1 mhz turn-on delay time vdd = 30v, \/gs = 10v, /o = 3a rgs = 50 q rise time \/dd = 30v, vgs = 10v, /d = 3a rgs = 50 0 turn-off delay time vdd = 30v, vgs = 10v, /d = 3a f?gs = 50 2 fall time \/dd = 30v, vgs = 10v, /d = 3a f?gs = 50 q fifs qss coss qss electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. ityp. max. unit reverse diode inverse diode continuous forward current tc = 25 c inverse diode direct current, pulsed tc = 25 c inverse diode forward voltage vgs = 0 v, ip = 46 a reverse recovery time vr = 30 v, /f=fei d/f/df = 100 a/us reverse recovery charge vr = 30 v, /f=/s, d/f/df = 100 a/us /s ism vsd frr qrr - - - - - - - 1.5 60 0.1 23 92 1.9 - - a v ns mc
|
